power transistors 1 2sb1418, 2sb1418a 2sb1418, 2sb1418a 2sb1418, 2sb1418a 2sb1418, 2sb1418a 2sb1418, 2sb1418a silicon pnp epitaxial planar type darlington for power amplification complementary to 2sd2138 and 2sd2138a features ? high forward current transfer ratio h fe ? high-speed switching ? allowing automatic insertion with radial taping absolute maximum ratings t c = 25 c 1 : base 2 : collector 3 : emitter mt-4 (mt4 type package) unit: mm electrical characteristics t c = 25 c parameter symbol rating unit collector to base 2sb1418 v cbo ? 60 v voltage 2sb1418a ? 80 collector to 2sb1418 v ceo ? 60 v emitter voltage 2sb1418a ? 80 emitter to base voltage v ebo ? 5v peak collector current i cp ? 4a collector current i c ? 2a collector power t c = 25 cp c 15 w dissipation t a = 25 c 2.0 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff 2sb1418 i cbo i cb = ? 60 v, i b = 0 ? 100 a current 2sb1418a i cb = ? 80 v, i b = 0 ? 100 collector cutoff 2sb1418 i ceo v ce = ? 30 v, i b = 0 ? 100 a current 2sb1418a v ce = ? 40 v, i b = 0 ? 100 emitter cutoff current i ebo v eb = ? 5 v, i c = 0 ? 100 a collector to emitter 2sb1418 v ceo i c = ? 30 ma, i b = 0 ? 60 v voltage 2sb1418a ? 80 forward current transfer ratio h fe1 v ce = ? 4 v, i c = ? 1 a 1 000 h fe2 * v ce = ? 4 v, i c = ? 2 a 2 000 10 000 base to emitter voltage v be v ce = ? 4 v, i c = ? 2 a ? 2.8 v collector to emitter saturation voltage v ce(sat) i c = ? 2 a, i b = ? 8 ma ? 2.5 v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 1 mhz 20 mhz turn-on time t on i c = ? 2 a, i b1 = ? 8 ma, i b2 = 8 ma, 0.2 s turn-off time t off v cc = ? 50 v 2 s rank q p h fe2 2 000 to 5 000 4 000 to 10 000 10.0 ?.2 0.65 ?.1 0.35 ?.1 2.5 ?.2 123 0.65 ?.1 1.2 ?.1 1.48 ?.2 2.25 ?.2 c 1.0 0.55 ?.1 0.55 ?.1 2.5 ?.2 1.05 ?.1 13.0 ?.2 4.2 ?.2 18.0 ?.5 solder dip 5.0 ?.1 2.5 ?.1 90? 1.0 ?.2 internal connection b c e note) * : rank classification
power transistors 2 2sb1418, 2sb1418a i c ? v be h fe ? i c c ob ? v cb p c ? t a i c ? v ce v ce(sat) ? i c area of safe operation (aso) r th(t) ? t 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 0 12 10 8 2 6 4 0 6 5 4 3 2 1 t c =25 ? c 0.2ma 0.4ma 0.6ma 0.8ma 1.0ma 1.2ma 1.4ma 1.6ma 1.8ma i b = 2.0ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.1 1 10 100 0.3 3 30 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =250 25 ? c t c =100 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0 4 1 3 2 0 6 5 4 3 2 1 t c =100 ? c 25 ? c 25 ? c v ce = 4v base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 10 30 100 300 1000 3000 10000 30000 100000 v ce = 4v t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) forward current transfer ratio h fe 1 3 10 30 100 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 t=1ms i cp i c 10ms 2sb1418a 2sb1418 non repetitive pulse t c =25 ? c dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 0.1 1 10 100 10000 1000 note: r th was measured at ta=25 ? c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ? c/w )
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